Semiconductors memory device with partial refresh

专利名称：Semiconductors memory device with partial

refresh function

发明人：Tomita, Hiroyoshi申请号：EP07114766.4申请日：20070822公开号：EP1906410A3公开日：20090819

专利附图：

摘要：A semiconductor memory device (20) includes a timing signal circuit (21) togenerate a refresh timing signal comprised of a series of pulses, a refresh address circuit(22) to generate a refresh address in synchronization with each pulse of the refresh

timing signal, a pulse selecting circuit (31) to assert a refresh request signal in

synchronization with pulses selected from the series of pulses, and a memory core (24)to receive the refresh address and the refresh request signal and to perform a refreshoperation with respect to the refresh address in response to assertion of the refreshrequest signal, wherein arrangement is made to switch between a first operation mode inwhich the selected pulses are obtained by selecting one pulse out of every

predetermined number of pulses from the series of pulses and a second operation modein which the selected pulses are obtained by selecting consecutive pulses from the seriesof pulses.

申请人：Fujitsu Microelectronics Limited

地址：7-1, Nishi-Shinjuku 2-chome Shinjuku-ku Tokyo 163-0722 JP

国籍：JP

代理机构：Kreutzer, Ulrich

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